solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com designer?s data sheet f eatures : bv ceo 400 v minimum fast switching : 250 ns max t(on) h igh frequency : minimum 50 mhz low saturation voltage 200 o c operating, gold eutectic die attach designed for complementary use with sft 6800 sft1192 s.5 2 a mp 50 0 volts pn p transistor smd.5 maximum ratings symbol value units collector ? emitte r voltage v ceo 400 volts collector ? base voltage v cbo 5 00 volts emitter ? base voltage v ceo 10 volts collector current i c 2 amps base current i b 0.5 amps total device dissipation @ t c = 1 75 o c derate above 1 75 o c p d 5 20 0 w mw/ o c operating and storage temperature range t j & t stg - 65 to +200 o c thermal resistance , junction to case r q jc 5.0 o c/w figure 1: outline and dimensions .135 .115 .304 .288 .408 .392 .304 .288 3x .020 .010 .030 min .128 .112 .233 .217 2x .010 max 2x .103 .087 .030 min all dimensions are in inches tolerances: (unless otherwise specified) xx: 0.01? xxx: 0.005? package outline: sm d.5 pinout: pin 1: collector pin 2: emitter pin 3: base note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: tr0 082 a doc
solid state devices, in c. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com sft1192 s.5 electrical characteristics symbol min max units collector ? emitter breakdown voltage (i c = 5 ma) bv ceo 400 ?? v collector ? base breakdown voltage (i c = 100 m a dc bv c b o 5 00 ?? v emitter ? base breakdown voltage (i e = 20 m a dc ) bv e b o 10 ?? v collector cutoff current ( v cb = 4 5 0 v dc ) i c bo ?? 1.0 m a collector cu toff current ( v ce = 40 0 v dc , v eb = 1. 5 v dc ) i cev ?? 10 m a emitter cutoff current (v e b = 6 v dc ) i ebo ?? 10 m a dc current gain* (v ce = 10 v dc ) ( i c = 1.0 ma dc ) ( i c = 50 ma dc ) ( i c = 50 0 m a dc ) h fe 80 60 40 ?? ?? ?? collector ? emitter saturation voltage* (i c = 5 0 ma dc , i b = 5 ma dc ) (i c = 5 0 0 ma dc , i b = 5 0 ma dc ) v c e (sat) ?? 0.4 1.0 v dc base ? emitter saturation voltage* (i c = 5 0 ma dc , i b = 5 ma dc ) (i c = 5 0 0 ma dc , i b = 5 0 ma dc ) v be (sat) ?? 1. 5 2.0 v dc current gain bandwidth product ( i c = 7 0 ma dc , v ce = 3 0 v dc , f = 20 mhz) f t 50 ?? mhz output capacitance (v cb = 2 0 v dc , i e = 0 a dc , f = 1 .0 mhz) c ob ?? 75 pf input capacitance (v eb = 2 v dc , i c = 0 a dc , f = 1.0 mhz) c ib ?? 300 pf turn on time t (on) ?? 250 ns turn off time (v cc = 10 0 v dc , i c = 500 ma dc , v eb(off) = 3.7 v dc i b1 = i b2 = 5 0 ma dc t (off) ?? 25 00 ns * pulse test: pulse width = 300 m sec, duty cycle = 2% for thermal derating curves and other characteristic curves please contact ssdi marketing department. note: all specifications are subject to change without notification . scd's for these devices should be reviewed by ssdi prior to release. data sheet #: tr0082a doc
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